The device is predicted as being capable to achieve end of life efficiency of about 30 percent at radiation doses equivalent of 10 years operation in Geo-stationary orbits (1 MeV electron radiation fluences in excess of 1015cm–2). The current/voltage and spectral quantum efficiency characteristics of GaAs MQW solar cells grown by chemical beam epitaxy are found to be consistent with model predictions, showing both an increase of the cell operating wavelength range and a superior current output. A modelling of the performance of the proposed device indicates possibilities for achieving practical efficiencies in excess of 35 percent under typical space sunlight illumination. The approach as demonstrated here enables the multijunction device to be made with all sub-cells optimized, rather than with a deliberately degraded top cell, as is now the case. InP∕InAsP multi-quantum-well solar cells with high built-in electric field and fast electronic escape time di.read more read lessĪbstract: Standard InGaP-GaAs-Ge cell is modified by incorporating pseudomorphic multi-quantum wells (MQW) of InGaAs to increase the photocurrent of the limiting GaAs subcell. A possible explanation of the origin of this effect is offered. The escape of electrons prior to heavy holes is shown to be a prerequisite to prevent severe open circuit voltage degradation. Light holes, as expected for most III-V nanostructure systems, are found to be the fastest escaping carriers in all samples. The escape sequence of the first confined electron-to-conduction band continuum and heavy/light holes-to-valence band continuum is extracted from the photoluminescence versus temperature analysis and by comparing the measured activation energies to calculated hole/electron well depths and thermionic escape times. The devices encompass nearly identical i-region thickness and built-in electric field and present similar absorption threshold energies. Abstract: This work is a study relating device performance and carrier escape sequence in a large set of InAsP∕InP p-i-n multi-quantum-well solar cells. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.įor technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Catherine Liu (email available below). If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. You can help adding them by using this form. We have no bibliographic references for this item. It also allows you to accept potential citations to this item that we are uncertain about. This allows to link your profile to this item. If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. See general information about how to correct material in RePEc.įor technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact. When requesting a correction, please mention this item's handle: RePEc:eee:phsmap:v:547:y:2020:i:c:s0378437119321089. You can help correct errors and omissions. All material on this site has been provided by the respective publishers and authors.
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